UPG2301T5L-E2-A【PDF 1/7 页】IC AMP BLUETOOTH 12TSQFN

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GaAs HBT INTEGRATED CIRCUIT

? PG2301T5L

POWER AMPLIFIER FOR Bluetooth TM Class 1

DESCRIPTION

The ? PG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1.

This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed

in a 12-pin plastic TSQFN package. And this package is able to high-density surface mounting.

FEATURES

? Operation frequency : f opt = 2 400 to 2 500 MHz (2 450 MHz TYP.)

? Supply voltage : V CC 1, 2 = V bias = 2.7 to 3.6 V (3.3 V TYP.)

? Control voltage : V cont = 0 to 3.6 V (2.5 V TYP.)

: V enable = 0 to 3.1 V (2.9 V TYP.)

? Circuit current : I CC = 120 mA TYP. @ V CC 1, 2 = V bias = 3.3 V, V cont = 2.5 V, V enable = 2.9 V,

P in = +4 dBm

? Maximum power : P out (MAX.) = +23 dBm TYP. @ V CC 1, 2 = V bias = 3.3 V, V cont = 2.5 V, V enable = 2.9

P in = +4 dBm

? Gain Control Range : GCR = 23 dB TYP. @ V CC 1, 2 = V bias = 3.3 V, V cont = 0 to 2.5 V, V enable = 2.9 V,

P in = +4 dBm

? Power gain : G P = 23 dB TYP. (Reference value)

? High efficiency : PAE = 50% TYP. (Reference value)

? Shut down function

? High-density surface mounting : 12-pin plastic TSQFN package (2.0 ? 2.0 ? 0.37 mm)

APPLICATIONS

? Power Amplifier for Bluetooth Class 1 etc.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form

? PG2301T5L-E2

? PG2301T5L-E2-A

12-pin plastic TSQFN

Note

(Pb-Free)

2301

? Embossed tape 8 mm wide

? Pin 10, 11, 12 face the perforation side of the tape

? Qty 3 kpcs/reel

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: ? PG2301T5L-A

Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PG10559EJ01V0DS (1st edition)

Date Published April 2005 CP(K)

? NEC Compound Semiconductor Devices, Ltd. 2005

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